IPDQ60R065S7XTMA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW PG-HDSOP-22
$10.86
Available to order
Reference Price (USD)
1+
$10.86000
500+
$10.7514
1000+
$10.6428
1500+
$10.5342
2000+
$10.4256
2500+
$10.317
Exquisite packaging
Discount
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Optimize your electronic systems with IPDQ60R065S7XTMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPDQ60R065S7XTMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
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