AIMW120R045M1XKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1200V 52A TO247-3
$24.04
Available to order
Reference Price (USD)
1+
$24.04000
500+
$23.7996
1000+
$23.5592
1500+
$23.3188
2000+
$23.0784
2500+
$22.838
Exquisite packaging
Discount
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Experience the power of AIMW120R045M1XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, AIMW120R045M1XKSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
- Vgs (Max): +20V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 228W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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