A3T18H455W23SR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$179.70
Available to order
Reference Price (USD)
150+
$122.24033
Exquisite packaging
Discount
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For mission-critical RF amplification, choose NXP USA Inc.'s A3T18H455W23SR6 MOSFETs. Combining silicon carbide (SiC) robustness with precision matching networks, they outperform in avionics and marine navigation systems. Extended lifecycle ratings reduce total cost of ownership. Your perfect component awaits click inquire to connect with our technical specialists!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 16.7dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 600 mA
- Power - Output: 192W
- Voltage - Rated: 65 V
- Package / Case: ACP-1230S-4L2S
- Supplier Device Package: ACP-1230S-4L2S
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