AFT26H200W03SR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.5GHZ NI1230S-4
$0.00
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Reference Price (USD)
150+
$118.86860
Exquisite packaging
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Unlock next-gen RF performance with AFT26H200W03SR6 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.5GHz
- Gain: 14.1dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 45W
- Voltage - Rated: 65 V
- Package / Case: NI-1230-4S
- Supplier Device Package: NI-1230-4S
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