MRF6S21100HR5
NXP USA Inc.
NXP USA Inc.
FET RF 68V 2.17GHZ NI-780
$0.00
Available to order
Reference Price (USD)
50+
$63.74360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MRF6S21100HR5 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 15.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 950 mA
- Power - Output: 23W
- Voltage - Rated: 68 V
- Package / Case: SOT-957A
- Supplier Device Package: NI-780H-2L
Related Products
NXP USA Inc.
ON5204,127
NXP USA Inc.
MRF8P9040GNR1
NXP USA Inc.
ON5223,118
NXP USA Inc.
MRF5S21130HR3
NXP USA Inc.
MRFE6S8046GNR1
Infineon Technologies
PTVA104501EHV1XWSA1
Ampleon USA Inc.
BLF6G10LS-200R,112
STMicroelectronics
SD56120M
NXP USA Inc.
ON5200,118
NXP USA Inc.