A3I20X050NR1
NXP USA Inc.
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
$59.72
Available to order
Reference Price (USD)
1+
$59.72400
500+
$59.12676
1000+
$58.52952
1500+
$57.93228
2000+
$57.33504
2500+
$56.7378
Exquisite packaging
Discount
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Unlock next-gen RF performance with A3I20X050NR1 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Active
- Transistor Type: LDMOS (Dual)
- Frequency: 1.8GHz ~ 2.2GHz
- Gain: 29.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 145 mA
- Power - Output: 6.3W
- Voltage - Rated: 65 V
- Package / Case: OM-400-8
- Supplier Device Package: OM-400-8
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