A2V09H525-04NR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF LDMOS WIDEBAND INTEGR
$202.31
Available to order
Reference Price (USD)
150+
$136.64047
Exquisite packaging
Discount
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Upgrade your RF designs with NXP USA Inc.'s A2V09H525-04NR6 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 720MHz ~ 960MHz
- Gain: 18.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 688 mA
- Power - Output: 120W
- Voltage - Rated: 105 V
- Package / Case: OM-1230-4L
- Supplier Device Package: OM-1230-4L
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