A2V09H400-04NR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$177.28
Available to order
Reference Price (USD)
250+
$104.10576
Exquisite packaging
Discount
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NXP USA Inc. presents the A2V09H400-04NR3 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 720MHz ~ 960MHz
- Gain: 17.9dB
- Voltage - Test: 48 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 688 mA
- Power - Output: 107W
- Voltage - Rated: 105 V
- Package / Case: OM-780-4L
- Supplier Device Package: OM-780-4L
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