AFT05MS006NT1
NXP USA Inc.
NXP USA Inc.
FET RF 30V 520MHZ PLD
$4.91
Available to order
Reference Price (USD)
1,000+
$1.95132
2,000+
$1.85376
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Unlock next-gen RF performance with AFT05MS006NT1 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Not For New Designs
- Transistor Type: LDMOS
- Frequency: 520MHz
- Gain: 18.3dB
- Voltage - Test: 7.5 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 100 mA
- Power - Output: 6W
- Voltage - Rated: 30 V
- Package / Case: PLD-1.5W
- Supplier Device Package: PLD-1.5W
Related Products
NXP USA Inc.
MRF8P29300HR6
MACOM Technology Solutions
UF2840G
Renesas Electronics America Inc
NE3517S03-T1D-A
Microchip Technology
VRF2944
Ampleon USA Inc.
BLL9G1214L-600U
NXP USA Inc.
A2G35S200-01SR3
Ampleon USA Inc.
CLF1G0035S-50
Ampleon USA Inc.
BLM8G0710S-30PBY
Ampleon USA Inc.
BLC8G27LS-100AVZ
Ampleon USA Inc.