A2T21S260W12NR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
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Reference Price (USD)
250+
$67.67544
Exquisite packaging
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The A2T21S260W12NR3 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.11GHz ~ 2.2GHz
- Gain: 17.9dB
- Voltage - Test: 28 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.6 A
- Power - Output: 218W
- Voltage - Rated: 65 V
- Package / Case: OM-880X-2L2L
- Supplier Device Package: OM-880X-2L2L
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