MRF6V2150NR1
NXP USA Inc.
NXP USA Inc.
RF ULTRA HIGH FREQUENCY BAND, N-
$0.00
Available to order
Reference Price (USD)
500+
$48.84238
Exquisite packaging
Discount
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Unlock next-gen RF performance with MRF6V2150NR1 from NXP USA Inc.. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 220MHz
- Gain: 25dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 450 mA
- Power - Output: 150W
- Voltage - Rated: 110 V
- Package / Case: TO-270AB
- Supplier Device Package: TO-270 WB-4
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