A2T21H410-24SR6
NXP USA Inc.
NXP USA Inc.
IC TRANS RF LDMOS
$0.00
Available to order
Reference Price (USD)
150+
$170.69313
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The A2T21H410-24SR6 by NXP USA Inc. redefines reliability in RF power transistors. Boasting high breakdown voltage and superior gain bandwidth, these MOSFETs are indispensable in medical imaging and industrial heating systems. Their design prioritizes energy efficiency without sacrificing power. Interested? Send us your requirements and we ll provide customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.17GHz
- Gain: 15.6dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 600 mA
- Power - Output: 72W
- Voltage - Rated: 65 V
- Package / Case: NI-1230-4LS2L
- Supplier Device Package: NI-1230-4LS2L
Related Products
NXP USA Inc.
MRF8P20160HR3
Ampleon USA Inc.
BLF6G15LS-40RN,112
Infineon Technologies
PTFA212001EV4R250XTMA1
NXP USA Inc.
BF996S,215
NXP USA Inc.
MRF8P9300HR6
NXP USA Inc.
MRF6S21140HR5
onsemi
J310
Infineon Technologies
BF5030WH6327XTSA1
NXP USA Inc.
MRF9045LR1
NXP USA Inc.