MRF8P20160HR3
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 1.92GHZ
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Engineered for excellence, NXP USA Inc.'s MRF8P20160HR3 RF MOSFETs offer best-in-class power density and thermal resistance. Ideal for amateur radio and test instrumentation, these transistors minimize signal loss while maximizing output. Backed by rigorous quality testing. Start your procurement process inquire today about bulk order discounts!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.92GHz
- Gain: 16.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 550 mA
- Power - Output: 37W
- Voltage - Rated: 65 V
- Package / Case: NI-780-4
- Supplier Device Package: NI-780-4
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