A2T18H455W23NR6
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
$0.00
Available to order
Reference Price (USD)
150+
$138.73600
Exquisite packaging
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NXP USA Inc. presents the A2T18H455W23NR6 RF MOSFET series the ultimate solution for high-power RF amplification. With exceptional linearity and low intermodulation distortion, these FETs excel in broadcast equipment and military communications. Their rugged construction ensures longevity even in harsh conditions. Don t compromise on quality request a quote today and experience the difference!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 14.5dB
- Voltage - Test: 31.5 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 1.08 A
- Power - Output: 56dBm
- Voltage - Rated: 65 V
- Package / Case: OM-1230-4L2S
- Supplier Device Package: OM-1230-4L2S
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