MRF6S9045MBR1
NXP USA Inc.
NXP USA Inc.
FET RF 68V 880MHZ TO-272-2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance MRF6S9045MBR1 RF MOSFETs from NXP USA Inc., designed for superior signal amplification in demanding applications. These transistors feature low noise, high gain, and excellent thermal stability, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless infrastructure, our FETs ensure reliable performance in critical environments. Contact us today for pricing and technical support let s power your next project together!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 880MHz
- Gain: 22.7dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 350 mA
- Power - Output: 10W
- Voltage - Rated: 68 V
- Package / Case: TO-272-2
- Supplier Device Package: TO-272-2
Related Products
Infineon Technologies
PTFA192001EV4T350XWSA1
NXP USA Inc.
A2T20H160W04NR3
Ampleon USA Inc.
BLC6G27-100,112
NXP USA Inc.
MRF372R3
Infineon Technologies
PTFB093608FVV2R250XTMA1
Infineon Technologies
PTFB093608SVV2R250XTMA1
Infineon Technologies
PTFA211801EV5T350XWSA1
Freescale Semiconductor
MRFE6S9160HR3
Wolfspeed, Inc.
PTFB181702FC-V1-R0
MACOM Technology Solutions