4MP10CH-TL-E
onsemi
onsemi
BIP NPN 0.1A 200V
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onsemi presents 4MP10CH-TL-E: The go-to RF BJT transistor for low-power, high-frequency designs. Its standout features like controlled beta variation and hermetic packaging make it a favorite among telecom engineers. From RFID readers to test equipment, versatility meets precision. Get started request samples or datasheets via our quick-response form!
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 200V
- Frequency - Transition: 400MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: 3-CPH
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