MT3S20P(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ PW-MINI
$0.00
Available to order
Reference Price (USD)
1,000+
$0.33000
2,000+
$0.30800
5,000+
$0.29260
10,000+
$0.28050
25,000+
$0.27280
Exquisite packaging
Discount
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Toshiba Semiconductor and Storage presents MT3S20P(TE12L,F): The go-to RF BJT transistor for low-power, high-frequency designs. Its standout features like controlled beta variation and hermetic packaging make it a favorite among telecom engineers. From RFID readers to test equipment, versatility meets precision. Get started request samples or datasheets via our quick-response form!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
- Gain: 16.5dB
- Power - Max: 1.8W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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