TQM110NB04CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 40V 12A/54A 8PDFNU
$2.69
Available to order
Reference Price (USD)
1+
$2.69000
500+
$2.6631
1000+
$2.6362
1500+
$2.6093
2000+
$2.5824
2500+
$2.5555
Exquisite packaging
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Discover high-performance TQM110NB04CR RLG from Taiwan Semiconductor Corporation, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, TQM110NB04CR RLG delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1352 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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