2SK3575-AZ
Renesas
Renesas
2SK3575 - SWITCHING N-CHANNEL PO
$2.19
Available to order
Reference Price (USD)
1+
$2.19441
500+
$2.1724659
1000+
$2.1505218
1500+
$2.1285777
2000+
$2.1066336
2500+
$2.0846895
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose 2SK3575-AZ by Renesas. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with 2SK3575-AZ inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 105W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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