2SK3357-A
Renesas
Renesas
2SK3357 - N-CHANNEL POWER MOSFET
$3.72
Available to order
Reference Price (USD)
1+
$3.72325
500+
$3.6860175
1000+
$3.648785
1500+
$3.6115525
2000+
$3.57432
2500+
$3.5370875
Exquisite packaging
Discount
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Optimize your electronic systems with 2SK3357-A, a high-quality Transistors - FETs, MOSFETs - Single from Renesas. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, 2SK3357-A provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 150W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P (MP-88)
- Package / Case: TO-3P-3, SC-65-3
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