GT100N12D5
Goford Semiconductor
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
$1.64
Available to order
Reference Price (USD)
1+
$1.64000
500+
$1.6236
1000+
$1.6072
1500+
$1.5908
2000+
$1.5744
2500+
$1.558
Exquisite packaging
Discount
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Boost your electronic applications with GT100N12D5, a reliable Transistors - FETs, MOSFETs - Single by Goford Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, GT100N12D5 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 70A
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 120W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-PowerVDFN
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