2SJ687-ZK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 20V 20A TO252
$1.50
Available to order
Reference Price (USD)
1+
$1.50000
500+
$1.485
1000+
$1.47
1500+
$1.455
2000+
$1.44
2500+
$1.425
Exquisite packaging
Discount
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Experience the power of 2SJ687-ZK-E1-AY, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, 2SJ687-ZK-E1-AY is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 36W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (MP-3ZK)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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