BSC032N04LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 21A/98A TDSON
$1.50
Available to order
Reference Price (USD)
5,000+
$0.52419
10,000+
$0.50449
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BSC032N04LSATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IPA65R280E6XKSA1
onsemi
NTD40N03R-001
onsemi
NVMFS5C404NLAFT1G
Rohm Semiconductor
RS3L140GNGZETB
Toshiba Semiconductor and Storage
TK12A53D(STA4,Q,M)
IXYS
IXFN180N20
onsemi
NTTFS010N10MCLTAG
Infineon Technologies
BSZ0506NSATMA1
Diodes Incorporated
DMN4026SK3-13
onsemi