2SJ673-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 60V 36A TO220
$1.85
Available to order
Reference Price (USD)
1+
$1.85378
500+
$1.8352422
1000+
$1.8167044
1500+
$1.7981666
2000+
$1.7796288
2500+
$1.761091
Exquisite packaging
Discount
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Experience the power of 2SJ673-AZ, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, 2SJ673-AZ is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 32W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Isolated Tab
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