FBG04N30BC
EPC Space, LLC
EPC Space, LLC
GAN FET HEMT 40V30A COTS 4FSMD-B
$313.40
Available to order
Reference Price (USD)
1+
$313.40000
500+
$310.266
1000+
$307.132
1500+
$303.998
2000+
$300.864
2500+
$297.73
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with FBG04N30BC by EPC Space, LLC, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, FBG04N30BC ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-SMD
- Package / Case: 4-SMD, No Lead
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