2SD734F
onsemi
onsemi
NPN EPITAXIAL PLANAR SILICON TRA
$0.12
Available to order
Reference Price (USD)
1+
$0.12480
500+
$0.123552
1000+
$0.122304
1500+
$0.121056
2000+
$0.119808
2500+
$0.11856
Exquisite packaging
Discount
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Experience superior performance with 2SD734F from onsemi, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, 2SD734F is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 50mA, 2V
- Power - Max: 600 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: 3-NP
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