2N5742
Microchip Technology
Microchip Technology
POWER BJT
$74.42
Available to order
Reference Price (USD)
1+
$74.41500
500+
$73.67085
1000+
$72.9267
1500+
$72.18255
2000+
$71.4384
2500+
$70.69425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose 2N5742 by Microchip Technology for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, 2N5742 is a versatile solution. Ready to order? Submit your inquiry today and let Microchip Technology provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 10mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 113 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: -
Related Products
Renesas Electronics America Inc
CE1A3Q(ND)-T-AZ
Microsemi Corporation
2N5091
Microchip Technology
2N3500L
Renesas Electronics America Inc
2SD1418DBTR
Microchip Technology
JANTXV2N2907UB
Microchip Technology
2N930UB
Microchip Technology
2N6562
Diodes Incorporated
DXTN22040CFGQ-7
Microchip Technology
2C6421
Microchip Technology