2N7002PW,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 310MA SOT323
$0.35
Available to order
Reference Price (USD)
3,000+
$0.05060
6,000+
$0.04400
15,000+
$0.03740
30,000+
$0.03520
75,000+
$0.03300
150,000+
$0.02860
Exquisite packaging
Discount
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Experience the power of 2N7002PW,115, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, 2N7002PW,115 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 260mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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