SI2328DS-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 1.15A SOT23-3
$0.90
Available to order
Reference Price (USD)
3,000+
$0.29188
6,000+
$0.27294
15,000+
$0.26347
30,000+
$0.25830
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SI2328DS-T1-E3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI2328DS-T1-E3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 730mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Taiwan Semiconductor Corporation
TSM80N1R2CP ROG
Renesas Electronics America Inc
BB502MBS-TL-E
Renesas Electronics America Inc
2SK3289ANTL-E
NXP USA Inc.
ON5258215
Rectron USA
RM50N60TI
Infineon Technologies
ISP25DP06LMXTSA1
Vishay Siliconix
SI2308BDS-T1-BE3
onsemi
FDS4685
Infineon Technologies
SPW15N60C3FKSA1
Fairchild Semiconductor