PMZ130UNEYL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 1.8A DFN1006-3
$0.44
Available to order
Reference Price (USD)
10,000+
$0.06160
30,000+
$0.05775
50,000+
$0.05121
100,000+
$0.05005
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
PMZ130UNEYL by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PMZ130UNEYL ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1.8A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883
- Package / Case: SC-101, SOT-883
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