2N6308T1
Microchip Technology
Microchip Technology
POWER BJT
$335.78
Available to order
Reference Price (USD)
1+
$335.77500
500+
$332.41725
1000+
$329.0595
1500+
$325.70175
2000+
$322.344
2500+
$318.98625
Exquisite packaging
Discount
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Trust 2N6308T1 by Microchip Technology for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, 2N6308T1 ensures reliability. Get in touch today to request a quote and see why Microchip Technology is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: -
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