ZTX558QSTZ
Diodes Incorporated
Diodes Incorporated
PWR HI VOLTAGE TRANSISTOR EP3 AM
$0.29
Available to order
Reference Price (USD)
1+
$0.29003
500+
$0.2871297
1000+
$0.2842294
1500+
$0.2813291
2000+
$0.2784288
2500+
$0.2755285
Exquisite packaging
Discount
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Trust ZTX558QSTZ by Diodes Incorporated for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, ZTX558QSTZ ensures reliability. Get in touch today to request a quote and see why Diodes Incorporated is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 1 W
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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