2N6306T1
Microchip Technology
Microchip Technology
POWER BJT
$335.78
Available to order
Reference Price (USD)
1+
$335.77500
500+
$332.41725
1000+
$329.0595
1500+
$325.70175
2000+
$322.344
2500+
$318.98625
Exquisite packaging
Discount
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Enhance your circuit designs with 2N6306T1 from Microchip Technology, a trusted name in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single are engineered for efficiency and durability, featuring fast switching speeds and robust construction. Ideal for use in audio amplifiers, signal processing, and more, 2N6306T1 ensures top-tier performance. Don't miss out on this exceptional component reach out to us today for more details and pricing.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 250 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 8A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 5V
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: -
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