BC847CQB-QZ
Nexperia USA Inc.
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
$0.04
Available to order
Reference Price (USD)
1+
$0.03922
500+
$0.0388278
1000+
$0.0384356
1500+
$0.0380434
2000+
$0.0376512
2500+
$0.037259
Exquisite packaging
Discount
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Choose BC847CQB-QZ by Nexperia USA Inc. for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, BC847CQB-QZ is a versatile solution. Ready to order? Submit your inquiry today and let Nexperia USA Inc. provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 340 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1110D-3
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