2N5010U4
Microchip Technology
Microchip Technology
POWER BJT
$90.21
Available to order
Reference Price (USD)
1+
$90.21000
500+
$89.3079
1000+
$88.4058
1500+
$87.5037
2000+
$86.6016
2500+
$85.6995
Exquisite packaging
Discount
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Optimize your designs with 2N5010U4 by Microchip Technology, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, 2N5010U4 is the perfect fit. Contact us today to learn more and place your order with Microchip Technology.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 1.4V @ 5mA, 25mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
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