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1EDN8511BXUSA1

Infineon Technologies
1EDN8511BXUSA1 Preview
Infineon Technologies
IC GATE DRV HALF BRD/LOW SOT23-6
$1.07
Available to order
Reference Price (USD)
3,000+
$0.54880
6,000+
$0.52565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Driven Configuration: Half-Bridge, Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 8V ~ 20V
  • Logic Voltage - VIL, VIH: 1.2V, 1.9V
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 6.5ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: PG-SOT23-6-2

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