DGD2190MS8-13
Diodes Incorporated
Diodes Incorporated
IC GATE DRV HALF-BRIDGE 8SO 2.5K
$1.78
Available to order
Reference Price (USD)
2,500+
$0.88350
Exquisite packaging
Discount
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The DGD2190MS8-13 Gate Drivers from Diodes Incorporated deliver unmatched performance for your power management needs. These ICs are packed with features like fast switching, high voltage tolerance, and minimal propagation delay, ideal for use in telecom infrastructure, renewable energy, and home automation. Diodes Incorporated prides itself on providing solutions that exceed expectations. Contact us now to find out how we can help you achieve your goals.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 4.5A, 4.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 25ns, 20ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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