ZXTP56060FDBQ-7
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR U-DFN2020-
$0.49
Available to order
Reference Price (USD)
3,000+
$0.19189
6,000+
$0.18086
15,000+
$0.16984
30,000+
$0.16800
Exquisite packaging
Discount
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The ZXTP56060FDBQ-7 Bipolar Junction Transistor Arrays from Diodes Incorporated are built for high-efficiency and long-lasting operation. Key benefits include matched transistor pairs, low distortion, and wide operating temperature range, ideal for RF and power amplification. Commonly found in broadcasting equipment, instrumentation, and security systems. Interested in learning more? Submit an inquiry and our experts will guide you through the selection process!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
- Power - Max: 510mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6
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