ZXTN620MATA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 80V 3.5A DFN2020B-3
$0.56
Available to order
Reference Price (USD)
3,000+
$0.21930
6,000+
$0.20670
15,000+
$0.19410
30,000+
$0.19200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with ZXTN620MATA by Diodes Incorporated, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, ZXTN620MATA is the perfect fit. Contact us today to learn more and place your order with Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3.5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
- Power - Max: 3 W
- Frequency - Transition: 160MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN
- Supplier Device Package: DFN2020B-3
Related Products
onsemi
BC557CG
Diodes Incorporated
BCX5316-13R
Nexperia USA Inc.
PMMT591A,215
Diodes Incorporated
ZXTP718MATA
Microchip Technology
2N6328
Microchip Technology
JANS2N2906AL
Diodes Incorporated
DXT790AP5-13
Microchip Technology
2N5679
NTE Electronics, Inc
NTE281
NTE Electronics, Inc