ZXTN619MATA
Diodes Incorporated
Diodes Incorporated
TRANS NPN 50V 4A DFN2020B-3
$0.56
Available to order
Reference Price (USD)
3,000+
$0.21930
6,000+
$0.20670
15,000+
$0.19410
30,000+
$0.19200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with ZXTN619MATA from Diodes Incorporated, a premier provider of Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single feature low saturation voltage and high efficiency, making them ideal for energy-sensitive projects. Suitable for both commercial and industrial uses, ZXTN619MATA guarantees performance and longevity. Interested? Send us an inquiry and let Diodes Incorporated support your next project.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 3 W
- Frequency - Transition: 165MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN
- Supplier Device Package: DFN2020B-3
Related Products
Nexperia USA Inc.
BCW30,235
Toshiba Semiconductor and Storage
2SA1313-Y,LF
Infineon Technologies
BC846BWE6327
Central Semiconductor Corp
CZT3019 TR PBFREE
onsemi
MJ21193G
Microchip Technology
JANSR2N2906AUA/TR
onsemi
KSA1013OBU
onsemi
MMBTA14LT1G
Diodes Incorporated
ZUMT717TA
Infineon Technologies