ZXMP3F35N8TA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 30V 9.3A 8SO
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Boost your electronic applications with ZXMP3F35N8TA, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, ZXMP3F35N8TA meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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