ZXMN3A06N8TA
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 8SOIC
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMN3A06N8TA from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, ZXMN3A06N8TA offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
Related Products
Vishay Siliconix
SI5997DU-T1-GE3
Microsemi Corporation
APTM120TDU57PG
onsemi
NTJD4401NT2G
Infineon Technologies
BSO612CVGHUMA1
Alpha & Omega Semiconductor Inc.
AO7801
onsemi
NVMFD5483NLWFT1G
IXYS
FMP26-02P
Rohm Semiconductor
QS6M3TR
onsemi
EFC6602R-TR
Infineon Technologies