ZXMN10B08E6TC
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 1.6A SOT26
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose ZXMN10B08E6TC by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with ZXMN10B08E6TC inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 1.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
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