ZTX857QSTZ
Diodes Incorporated
Diodes Incorporated
PWR HI VOLTAGE TRANSISTOR EP3 AM
$0.63
Available to order
Reference Price (USD)
1+
$0.62805
500+
$0.6217695
1000+
$0.615489
1500+
$0.6092085
2000+
$0.602928
2500+
$0.5966475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with ZTX857QSTZ by Diodes Incorporated, a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, ZTX857QSTZ is the perfect fit. Contact us today to learn more and place your order with Diodes Incorporated.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
- Power - Max: 1.2 W
- Frequency - Transition: 80MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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