ZTX853QSTZ
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR EP3 AMMO
$0.63
Available to order
Reference Price (USD)
1+
$0.62805
500+
$0.6217695
1000+
$0.615489
1500+
$0.6092085
2000+
$0.602928
2500+
$0.5966475
Exquisite packaging
Discount
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Experience superior performance with ZTX853QSTZ from Diodes Incorporated, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, ZTX853QSTZ is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 1.2 W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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