YJG95G06A-F1-0100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 95A PDFN5060-8L-
$1.62
Available to order
Reference Price (USD)
1+
$1.62000
500+
$1.6038
1000+
$1.5876
1500+
$1.5714
2000+
$1.5552
2500+
$1.539
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with YJG95G06A-F1-0100HF by Yangzhou Yangjie Electronic Technology Co.,Ltd, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, YJG95G06A-F1-0100HF ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 155A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerLDFN
Related Products
Vishay Siliconix
SI1401EDH-T1-GE3
Microchip Technology
LND150N3-G-P002
NTE Electronics, Inc
NTE2399
STMicroelectronics
STF45N65M5
STMicroelectronics
STFW69N65M5
Vishay Siliconix
IRFI640GPBF
Infineon Technologies
SPW11N60S5
Toshiba Semiconductor and Storage
TK31A60W,S4VX
Texas Instruments
CSD17311Q5
Fairchild Semiconductor