XPN6R706NC,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 40A 8TSON
$1.49
Available to order
Reference Price (USD)
1+
$1.49000
500+
$1.4751
1000+
$1.4602
1500+
$1.4453
2000+
$1.4304
2500+
$1.4155
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose XPN6R706NC,L1XHQ by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with XPN6R706NC,L1XHQ inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta), 100W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
- Package / Case: 8-PowerVDFN
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