XP231N02013R-G
Torex Semiconductor Ltd
Torex Semiconductor Ltd
MOSFET N-CH 30V 200MA SOT323-3
$0.06
Available to order
Reference Price (USD)
1+
$0.06325
500+
$0.0626175
1000+
$0.061985
1500+
$0.0613525
2000+
$0.06072
2500+
$0.0600875
Exquisite packaging
Discount
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Torex Semiconductor Ltd presents XP231N02013R-G, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, XP231N02013R-G delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 4.5V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6.5 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323-3A
- Package / Case: SC-70, SOT-323
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