Shopping cart

Subtotal: $0.00

WNSC2D08650DJ

WeEn Semiconductors
WNSC2D08650DJ Preview
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE
$2.27
Available to order
Reference Price (USD)
1+
$2.27000
500+
$2.2473
1000+
$2.2246
1500+
$2.2019
2000+
$2.1792
2500+
$2.1565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: 260pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: 175°C

Related Products

Vishay General Semiconductor - Diodes Division

BYM11-50HE3/97

Vishay General Semiconductor - Diodes Division

SL02-GS18

Toshiba Semiconductor and Storage

CMF05(TE12L,Q,M)

Diodes Incorporated

UF1007-T

Rohm Semiconductor

RB161QS-40T18R

Global Power Technology-GPT

G3S06505H

Nexperia USA Inc.

PMEG045T150EPDZ

GeneSiC Semiconductor

GD20MPS12H

Taiwan Semiconductor Corporation

FR154GH

Top