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WNSC201200WQ

WeEn Semiconductors
WNSC201200WQ Preview
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$9.68
Available to order
Reference Price (USD)
1+
$9.67670
500+
$9.579933
1000+
$9.483166
1500+
$9.386399
2000+
$9.289632
2500+
$9.192865
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 220 µA @ 1200 V
  • Capacitance @ Vr, F: 1.02nF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: 175°C (Max)

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